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MJH11020 Datasheet PDF
- Silicon NPN Power Transistor - Transistor
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification MJH11020 DESCRIPTION ·High DC Current Gain- : hFE = 400(Min)@ IC= 10A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 200V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 2.5V(Max)@ IC= 10A = 4.0V(Max)@ IC= 15A ·Complement to Type MJH11019 APPLICATIONS ·Designed for general purpose amplifiers ,low frequency switching and motor control applications. ABSOLUTE MAXIMUM RATINGS(Ta=2
Inchange Semiconductor - 15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150 / 200 / 250 VOLTS 150 WATTS - Transistor
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJH11017, D MJH10012 (See MJ10012) Complementary Darlington Silicon Power Transistors . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. High DC Current Gain @ 10 Adc hFE = 400 Min (All Types) Collector Emitter Sustaining Voltage VCEO(sus) = 150 Vdc (Min) MJH11018, 17 VCEO(sus) = 200 Vdc (Min) MJH11020, 19 VCEO(sus) = 250 Vdc (Min) MJH11022, 21 Low Collector Emitter
Motorola Semiconductors
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