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MBRT20080R Datasheet PDF
- Silicon Power Schottky Diode - Diode
MBRT20045 thru MBRT200100R Silicon Power Schottky Diode Features High Surge Capability Types up to 100 V VRRM Isolation Type Package Three Tower Package VRRM = 20 V - 100 V IF = 200 A Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Repetitive p p peak reverse voltage g RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature Symbol
GeneSiC - Silicon Power Schottky Diode - Diode
America Semiconductor
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