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MB85R1002 Datasheet PDF
- Memory FRAM - Data
FUJITSU SEMICONDUCTOR DATA SHEET DS05-13104-1E Memory FRAM CMOS 1 M Bit (64 K×16) MB85R1002 - DESCRIPTIONS The MB85R1002 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words x 16 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, MB85R1002 is able to retain data without back-up battery. The memory cells used for the MB85R1002 has improved at least 1010 times of read, wri
Fujitsu Media Devices - 1 M Bit (64 K x 16) - Data
FUJITSU SEMICONDUCTOR DATA SHEET DS501-00004-0v01-E Memory FRAM CMOS 1 M Bit (64 K × 16) MB85R1002A - DESCRIPTIONS The MB85R1002A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words × 16 bits of nonvolatile memory cells created using ferroelectric process and silicon gate CMOS process technologies. The MB85R1002A is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85R1002A can be used for 1010 read, write
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