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LP2307LT3G Datasheet PDF
- 16V P-Channel Enhancement-Mode MOSFET - MOSFET
LESHAN RADIO COMPANY, LTD. 16V P-Channel Enhancement-Mode MOSFET VDS= -16V RDS(ON), [email protected], [email protected] = 60 mΩ RDS(ON), [email protected], [email protected] = 100 mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance ▼ Simple Drive Requirement ▼ Small Package Outline ▼ Surface Mount Device LP2307LT1G 3 1 2 SOT 23 (TO 236AB) D G S ORDERING INFORMATION Device Marking Shipping LP2307LT1G P07 3000, Tape&Reel LP2307LT3G P07 10000, Tape&Reel Absolute
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