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KTC2201 Datasheet PDF
- Silicon NPN Power Transistors - Transistor
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KTC2201 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Switching regulator applicaition. ·High voltage switching application. ·High speed DC-DC converter application. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO E
Inchange Semiconductor
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