SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION. AUDIO MUTING APPLICATION.
KRC881T~KRC886T
EPITAXIAL PLANAR NPN TRANSISTOR
E
FEATURES
High emitter-base voltage : VEBO=25V(Min) High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process.
C A F G
K 1
B
K 6
Low on resistance : Ron=1 (Typ.) (IB=5mA)
2
5 4
DIM A B C D E
D
F G H I J K L
3
MILLIMETERS _ 0.2 2.9 + 1.6+0.2, -0.1 _ 0.