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KRC286M Datasheet PDF
- EPITAXIAL PLANAR NPN TRANSISTOR - Transistor
SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION. AUDIO MUTING APPLICATION. FEATURES High emitter-base voltage : VEBO=25V(Min) High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) Low on resistance : Ron=1 (Typ.) (IB=5mA) With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. C H KRC281M~KRC286M EPITAXIAL PLANAR NPN TRANSISTOR B A O M EQUIVALENT CIRCUIT J E E C B R1 1 L 2 3 N DIM MILLIMETERS A 3.20 MAX B 4.30 MAX C 0.55
Korea Electronics
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