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KF3N60P Datasheet PDF
- N-CHANNEL MOS FIELD EFFECT TRANSISTOR - Transistor
SEMICONDUCTOR TECHNICAL DATA KF3N60P, F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF3N60P This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS= 600V, ID= 3A Drain-Source ON Resistance : RDS(ON)=3.3 Qg(typ) = 8.5nC @VGS = 10V MAXIMUM RATING (Ta=25 ) CHARACTERISTIC RATING SYM
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