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KDV358 Datasheet PDF
- SILICON EPITAXIAL PLANAR DIODE - Diode
SEMICONDUCTOR TECHNICAL DATA VCO FOR UHF, VHF BAND. FEATURES Good C-V Linearity. Low Series Resistance. : rS=0.4 Small Package : USC. (Max.) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Junction Temperature Storage Temperature Range VR Tj Tstg RATING 15 150 -55 150 UNIT V KDV358 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CATHODE MARK E A K F L B 1 G H 2 D MM 1. ANODE 2. CATHODE J C I DIM MILLIMETERS A 2.50 +_ 0.1 B 1.25+_ 0.05 C 0.90 +_0.05 D 0.30
KEC - SILICON EPITAXIAL PLANAR DIODE - Diode
SEMICONDUCTOR TECHNICAL DATA VCO FOR UHF, VHF BAND. FEATURES Good C-V Linearity. Low Series Resistance. : rS=0.4 Small Package : TFSC. (Max.) KDV358F VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CATHODE MARK 21 CE DF MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Junction Temperature Storage Temperature Range VR Tj Tstg RATING 15 150 -55 150 UNIT V B A 1. ANODE 2. CATHODE DIM A B C D E F MILLIMETERS 1.00+_ 0.05 0.80+0.10, -0.05 0.60+_ 0.05 0.30+_ 0.05 0
KEC
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