Power MOSFETs
2SK3628
Silicon N-channel power MOSFET
For hihg-speed switching
15.0±0.3 11.0±0.2
Unit: mm
5.0±0.2 (3.2)
(0.7)
- Features
Avalanche energy capability guaranteed High-speed switching Low ON resistance Ron No secondary breakdown
- Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current Avalanche energy capability *
VDSS VGSS
ID IDP EAS
230 ±30 20 80 570
V V A A