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K2967 Datasheet PDF
- N-Channel MOSFET, 2SK2967 - Data
2SK2967 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSV) 2SK2967 DC DC Converter, Relay Drive and Motor Drive Applications - Low drain source ON resistance - High forward transfer admittance : RDS (ON) = 48 mΩ (typ.) : |Yfs| = 30 S (typ.) Unit: mm - Low leakage current : IDSS = 100 μA (max) (VDS = 250 V) - Enhancement mode : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain source voltage Drain gate voltage (RGS = 20 k�
Toshiba Semiconductor
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