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IXTP8N65X2 Datasheet PDF
- Power MOSFET, Transistor - MOSFET
Preliminary Technical Information X2-Class Power MOSFET N-Channel Enhancement Mode IXTY8N65X2 IXTA8N65X2 IXTP8N65X2 VDSS = ID25 = RDS(on) 650V 8A 500m TO-252 (IXTY) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv, dt PD TJ TJM Tstg TL TSOLD FMCd Weight Test Conditions TJ = 25 C to 150 C TJ = 25 C to 150 C, RGS = 1M Continuous Transient Maximum Ratings 650 650 30 40 V V V V TC = 25 C TC = 25 C, Pulse Width Limited by TJM TC = 25 C TC = 25 C IS IDM, VDD VDSS, TJ 150°C TC = 25 C 8
IXYS - Power MOSFET, Transistor - MOSFET
Advance Technical Information X2-Class Power MOSFET (Electrically Isolated Tab) IXTP8N65X2M VDSS = ID25 = RDS(on) 650V 4A 550m N-Channel Enhancement Mode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv, dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25 C to 150 C TJ = 25 C to 150 C, RGS = 1M Continuous Transient TC = 25 C TC = 25 C, Pulse Width Limited by TJM TC = 25 C TC = 25 C IS IDM, VDD VDSS, TJ 150°C TC = 25 C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) fr
IXYS
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