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IXTH88N30P Datasheet PDF
- (IXTH88N30P / IXTT88N30P) PolarHT Power MOSFET - MOSFET
PolarHTTM Power MOSFET N-Channel Enhancement Mode Preliminary Data Sheet IXTH 88N30P IXTT 88N30P RDS(on) VDSS = 300 ID25 = 88 = 40 mΩ V A Symbol VDSS VDGR VGSM ID25 ID(RMS) IDM IAR EAR EAS dv, dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Maximum Ratings 300 300 ± 20 V V V A A A A mJ J V, ns W °C °C °C °C TO-247 (IXTH) D (TAB) TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25
IXYS Corporation - PolarHT Power MOSFET - MOSFET
PolarHTTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH 88N30P IXTK 88N30P IXTQ 88N30P IXTT 88N30P VDSS ID25 RDS(on) = 300 V = 88 A = 40 mΩ TO-247 (IXTH) D (TAB) Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv, dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di, dt
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