HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode High dv, dt, Low trr, HDMOSTM Family
VDSS IXFH, IXFT 30N50 IXFH, IXFT 32N50 500 V 500 V
ID25 30 A 32 A
RDS(on) 0.16 W 0.15 W
trr 250 ns
TO-247 AD (IXFH)
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAS EAR dv, dt PD TJ TJM Tstg TL Md Weight
Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C pulse width limited by TJM TC = 25°C TC = 25°C ID = 25°C IS IDM, di, dt 100 A, ms, VDD
IXYS
HiPerFET Power MOSFETs - MOSFET
HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode High dv, dt, Low trr, HDMOSTM Family
VDSS IXFH, IXFT 30N50 IXFH, IXFT 32N50 500 V 500 V
ID25 30 A 32 A
RDS(on) 0.16 W 0.15 W
trr 250 ns
TO-247 AD (IXFH)
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAS EAR dv, dt PD TJ TJM Tstg TL Md Weight
Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C pulse width limited by TJM TC = 25°C TC = 25°C ID = 25°C IS IDM, di, dt 100 A, ms, V