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IXFH26N60 Datasheet PDF
- Power MOSFETs - MOSFET
HiPerFETTM Power MOSFETs IXFH 26N60, IXFT 26N60 IXFK 28N60 N-Channel Enhancement Mode Avalanche Rated, High dv, dt, Low t rr Preliminary data V DSS I D25 600 V 26 A 600 V 28 A trr 250 ns R DS(on) 0.25 W 0.25 W Symbol VDSS VDGR V GS VGSM I D25 I DM I AR EAR EAS dv, dt P D TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient T C = 25°C, Chip capability T C = 25°C, pulse width limited by T JM T C = 25°C TC =
IXYS - N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated - Diode
Advance AdvanceTechnical TechnicalInformation Information PolarHVTM Power MOSFET N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated IXFH 26N60P IXFQ 26N60P IXFT 26N60P IXFV 26N60P IXFV 26N60PS VDSS ID25 = = RDS(on) ≤ ≤ trr TO-247 (IXFH) 600 V 26 A 270 mΩ 200 ns Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv, dt PD TJ TJM Tstg TL Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse widt
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