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IXDP35N60B Datasheet PDF
- IGBT with optional Diode - IGBT
IGBT with optional Diode High Speed, Low Saturation Voltage IXDP 35N60 B VCES = 600 V = 60 A IXDH 35N60 B IC25 IXDH 35N60 BD1 VCE(sat) typ = 2.1 V C G G C TO-247 AD IXDH ... E IXDH 35N60 B IXDP 35N60 B E IXDH 35N60 BD1 G C E C (TAB) Symbol VCES VCGR VGES VGEM IC25 IC90 ICM RBSOA tSC (SCSOA) PC TJ Tstg Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kW Continuous Transient TC = 25°C TC = 90°C TC = 90°C, tp =1 ms VGE = ±15 V, TJ = 125°C, RG = 10 W Clamped inductive l
IXYS Corporation
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