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IRGMC50F Datasheet PDF
- INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT - IGBT
PD -90718B IRGMC50F INSULATED GATE BIPOLAR TRANSISTOR Features Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kH- - 8 kH- Switching-loss rating includes all "tail" losses C Fast Speed IGBT VCES = 600V G E VCE(on) max = 1.7V @VGE = 15V, IC = 30A Description n-channel Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the
International Rectifier
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