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IRGBC40S Datasheet PDF
- INSULATED GATE BIPOLAR TRANSISTOR - Transistor
Previous Datasheet Index Next Data Sheet PD - 9.690A IRGBC40S INSULATED GATE BIPOLAR TRANSISTOR Features Switching-loss rating includes all "tail" losses Optimized for line frequency operation ( to 400 Hz) See Fig. 1 for Current vs. Frequency curve G E C Standard Speed IGBT VCES = 600V VCE(sat) ≤ 1.8V @VGE = 15V, I C = 31A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transis
International Rectifier
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