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IRG4RC20F Datasheet PDF
- INSULATED GATE BIPOLAR TRANSISTOR - Transistor
PD - 91731A IRG4RC20F INSULATED GATE BIPOLAR TRANSISTOR Features Fast: Optimized for medium operating frequencies (1-5 kH- in hard switching, >20 kH- in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation IGBTs. Industry standard TO-252AA package Combines very low VCE(on) with low switching losses C Fast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.82V @VGE = 15V, IC = 12A N-channel Benefits Generation 4 IGBTs
International Rectifier - INSULATED GATE BIPOLAR TRANSISTOR - Transistor
PD- 95155 IRG4RC20FPbF Lead-Free www.irf.com 1 05, 04, 04 IRG4RC20FPbF 2 www.irf.com IRG4RC20FPbF www.irf.com 3 IRG4RC20FPbF 4 www.irf.com IRG4RC20FPbF www.irf.com 5 IRG4RC20FPbF 6 www.irf.com IRG4RC20FPbF www.irf.com 7 IRG4RC20FPbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) 6.73 (.265) 6.35 (.250) -A5.46 (.215) 5.21 (.205) 4 6.45 (.245) 5.68 (.224) 10.42 (.410) 9.40 (.370) 0.51 (.020) MIN. LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 -
International Rectifier
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