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IRFZ48ZPBF Datasheet PDF
- Power MOSFET, Transistor - MOSFET
PD - 95574A IRFZ48ZPbF IRFZ48ZSPbF Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv, dt Rating l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanc
International Rectifier
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