IRFZ48, SiHFZ48
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 110 29 36 Single
D
FEATURES
60 0.018
Dynamic dV, dt Rating Repetitive Avalanche Rated Ultra Low On-Resistance Very Low Thermal Resistance 175 °C Operating Temperature Fast Switching Ease of Paralleling Compliant to RoHS Directive 2002, 95, EC
Available
RoHS*
COMPLIANT
TO-220AB
DESCRIPTION
Third generation Power MOSFETs from Vishay provide
Vishay
Power MOSFET, Transistor - MOSFET
www.vishay.com
IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) ( ) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
60 VGS = 10 V
110 29 36 Single
0.018
D
I2PAK (TO-262)
D2PAK (TO-263)
FEATURES
Advanced process technology
Surface mount (IRFZ48S, SiHFZ48S)
Low-profile through-hole (IRFZ48L, SiHFZ48L) 175 °C operating temperature
Available
Fast switching
Material categorization: for definitions of
compliance
please
see
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