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IRFWZ44 Datasheet PDF
- Power MOSFET, Transistor - MOSFET
$GYDQFHG 3RZHU 026)(7 IRFWZ44 FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175°C Operating Temperature Lower Leakage Current: 10 A (Max.) @ VDS = 60V Lower RDS(ON): 0.020Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv, dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Curre
Fairchild Semiconductor - Power MOSFET, Transistor - MOSFET
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Samsung
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