|
IRFP450LC Datasheet PDF
- Power MOSFET, Transistor - MOSFET
Previous Datasheet Index Next Data Sheet PD - 9.1231 IRFP450LC HEXFET ® Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv, dt Rated Repetitive Avalanche Rated Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Hexfet technology the device improvements allow for reduced gate drive require
International Rectifier - Power MOSFET, Transistor - MOSFET
IRFP450LC, SiHFP450LC Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 74 19 35 Single D FEATURES 500 0.40 Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30 V VGS Rating Reduced Ciss, Coss, Crss Isolated Central Mounting Hole Dynamic dV, dt Rated Repetitive Avalanche Rated Lead (Pb)-free Available Available RoHS* COMPLIANT TO-247 DESCRIPTION This new series of low charge Power MOSFETs achi
Vishay Siliconix
|
|
Please enter the part name