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IRFF9230 Datasheet PDF
- -4.0A/ -200V/ 0.800 Ohm/ P-Channel Power MOSFET - MOSFET
IRFF9230 Data Sheet February 1999 File Number 2225.2 -4.0A, -200V, 0.800 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power eld effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a speci ed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar swi
Intersil Corporation
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