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IRFF9220 Datasheet PDF
- -2.5A/ -200V/ 1.5 Ohm/ P-Channel Power MOSFETs - MOSFET
IRFF9220 Data Sheet July 1998 File Number 2288.2 -2.5A, -200V, 1.5 Ohm, P-Channel Power MOSFETs These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. They are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requir
Intersil Corporation - REPETITIVE AVALANCHE AND dv/dt RATED HEXFETTRANSISTORS THRU-HOLE (TO-205AF) - Transistor
PD - 90553C REPETITIVE A V ALANCHE AND dv, dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-205AF) Product Summary Part Number IRFF9220 BVDSS -200V RDS(on) 1.5Ω ID -2.5A IRFF9220 JANTX2N6847 JANTXV2N6847 REF:MIL-PRF-19500, 563 200V, P-CHANNEL The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high
International Rectifier
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