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IRFBE20 Datasheet PDF
- Power MOSFET(Vdss=800V/ Rds(on)=6.5ohm/ Id=1.8A) - MOSFET
International Rectifier - Power MOSFET, Transistor - MOSFET
Power MOSFET IRFBE20, SiHFBE20 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 800 VGS = 10 V 38 5.0 21 Single 6.5 D TO-220 G S D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES Dynamic dV, dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead (Pb)-free Available Available RoHS* COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vishay pr
Vishay
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