l Generation V Technology l Ultra Low On-Resistance l P-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv, dt Rating l Fast Switching
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and r
International Rectifier
HEXFET Power MOSFET - MOSFET
PD - 95137
IRF7416PbF
l l l l l l l l
Generation V Technology Ultra Low On-Resistance P-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv, dt Rating Fast Switching Lead-Free
HEXFET® Power MOSFET
S
1 8 7
A D D D D
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S G
2
VDSS = -30V RDS(on) = 0.02Ω
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6
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5
Description
Top View
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast swi