PD - 95039
IRF7313PbF
l l l l l l
Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated Lead-Free
HEXFET® Power MOSFET
S1 G1 S2 G2
1 2 8 7
D1 D1 D2 D2
VDSS = 30V RDS(on) = 0.029Ω
3 4
6 5
Top View
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXF