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IRF614 Datasheet PDF
- N-Channel Mosfet Transistor - MOSFET
INCHANGE Semiconductor isc N-Channel Mosfet Transistor ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements isc Product Specification IRF614 ·DESCRITION ·Designed for high speed applications, such as switching power supplies , AC and DC motor controls,relay and solenoid drivers and other pulse. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous
Inchange Semiconductor - 2.0A/ 250V/ 2.0 Ohm/ N-Channel Power MOSFET - MOSFET
IRF614 January 1998 2.0A, 250V, 2.0 Ohm, N-Channel Power MOSFET Description This is an N-Channel enhancement mode silicon gate power eld effect transistor. It is an advanced power MOSFET designed, tested, and guaranteed to withstand a speci ed level of energy in the breakdown avalanche mode of operation. This power MOSFET is designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requir
Intersil Corporation
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