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IRF2907ZPBF Datasheet PDF
- Power MOSFET, Transistor - MOSFET
PD - 95489D Features l l l l l l IRF2907ZPbF IRF2907ZSPbF IRF2907ZLPbF HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free VDSS = 75V RDS(on) = 4.5mΩ G S Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature,
International Rectifier
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