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IRF223 Datasheet PDF
- N-Channel MOSFET Transistor - MOSFET
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF223 DESCRIPTION ·Drain Current ID=4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) =1.2Ω(Max) ·High Speed Applications APPLICATIONS ·Switching power supplies ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) 150 V Gate-Source Voltage ±20 V Drain Current-continuous@ TC=25℃ 4 A
Inchange Semiconductor - N-Channel Power MOSFETs - MOSFET
Semiconductor October 1997 IRF220, IRF221, IRF222, IRF223 4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs Features 4.0A and 5.0A, 150V and 200V rDS(ON) = 0.8Ω and 1.2Ω SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Majority Carrier Device Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER PACKAGE BRAND IRF220 T
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