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IRF1104 Datasheet PDF
- Power MOSFET(Vdss=40V/ Rds(on)=0.009ohm/ Id=100A) - MOSFET
PD- 9.1724A PRELIMINARY l l l l l l IRF1104 HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance Dynamic dv, dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 40V G S RDS(on) = 0.009Ω ID = 100A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desi
International Rectifier - (IRF1104L/S) HEXFET Power MOSFET - MOSFET
PD -91845 IRF1104S, L HEXFET® Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Surface Mount (IRF1104S) Low-profile through-hole (IRF1104L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 40V RDS(on) = 0.009Ω G ID = 100A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switchin
International Rectifier
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