|
HFS4N65FS Datasheet PDF
- N-Channel MOSFET - MOSFET
HFS4N65FS July 2015 HFS4N65FS 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ ID = 4 A FEATURES TO-220F Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 8.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 3.0 7\S#9GS=10V 100% Avalanche Tested Single Gauge Package 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25 unless otherwi
SemiHow
|
|
Please enter the part name