HFS4N60FS Datasheet PDF
600V N-Channel MOSFET
- MOSFET
HFS4N60FS July 2015 HFS4N60FS 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ID = 4 A FEATURES TO-220F Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 8.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 2.6 7\S#9GS=10V 100% Avalanche Tested Single Gauge Package 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25 unless otherwi
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