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HFS4N60 Datasheet PDF
- 600V, 4A, N-Channel MOSFET - MOSFET
Low RDS(ON) of 2.0Ω (typ.) / Low gate charge of 15nC (typ.) / Robust avalanche energy handling
SEMIHOW - 600V N-Channel MOSFET - MOSFET
HFS4N60FS July 2015 HFS4N60FS 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ID = 4 A FEATURES TO-220F Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 8.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 2.6 7\S#9GS=10V 100% Avalanche Tested Single Gauge Package 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25 unless otherwi
SemiHow
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