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HCS20K Datasheet PDF
- Radiation Hardened Dual 4-Input NAND Gate - Gate
HCS20MS September 1995 Radiation Hardened Dual 4-Input NAND Gate Pinouts 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-183S CDIP2-T14, LEAD FINISH C TOP VIEW A1 1 B1 2 NC 3 C1 4 D1 5 Y1 6 GND 7 14 VCC 13 D2 12 C2 11 NC 10 B2 9 A2 8 Y2 Features 3 Micron Radiation Hardened SOS CMOS Total Dose 200K RAD (Si) SEP Effective LET No Upsets: >100 MEV-cm2, mg Single Event Upset (SEU) Immunity < 2 x 10-9 Errors, Bit-Day (Typ) Dose Rate Survivability: >1 x 1012 RAD (Si), s Dose Rat
Intersil Corporation - Radiation Hardened Dual 4-Input NAND Gate - Gate
HCS20MS September 1995 Radiation Hardened Dual 4-Input NAND Gate Pinouts 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-183S CDIP2-T14, LEAD FINISH C TOP VIEW A1 1 B1 2 NC 3 C1 4 D1 5 Y1 6 GND 7 14 VCC 13 D2 12 C2 11 NC 10 B2 9 A2 8 Y2 Features 3 Micron Radiation Hardened SOS CMOS Total Dose 200K RAD (Si) SEP Effective LET No Upsets: >100 MEV-cm2, mg Single Event Upset (SEU) Immunity < 2 x 10-9 Errors, Bit-Day (Typ) Dose Rate Survivability: >1 x 1012 RAD (Si), s Dose Rat
Intersil Corporation
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