Silicon N Channel MOS FET High Speed Power Switching - Data
H5N2522LS
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1667-0100 Rev.1.00 Apr 23, 2008
Features
Low on-resistance Low leakage current High speed switching Built-in fast recovery diode
Outline
RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) )
D 4 1. Gate 2. Drain 3. Source 4. Drain
1
G 2 3
S
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-d