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GTT2603 Datasheet PDF
- P-CHANNEL ENHANCEMENT MODE POWER MOSFET - MOSFET
Pb Free Plating Product ISSUED DATE :2006, 03, 28 REVISED DATE : GTT2603 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -20V 65m -5.0A The GTT2603 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The GTT2603 is universally used for all commercial-industrial applications. Description Features *Simple Drive Requirement *Small Package Outline Package Dimensions REF. A A1 A2 c D E E1 Millime
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