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GT60M324 Datasheet PDF
- SILICON N CHANNEL IGBT - IGBT
GT60M324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M324 Consumer Application Voltage Resonance Inverter Switching Application Sixth Generation IGBT Unit: mm FRD included between emitter and collector Enhancement mode type High speed IGBT : tf = 0.11μs (typ.) (IC = 60A) FRD : trr = 0.8μs (typ.) (di, dt = 20 A, μs) Low saturation voltage: VCE (sat) =1.70V (typ.) (IC = 60A) High Junction temperature : Tj = 175℃ (max) Absolute Maximum Ratings (Ta = 25°C)
Toshiba
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