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GT50N322A Datasheet PDF
- Insulated Gate Bipolar Transistor - Transistor
GT50N322A TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50N322A Voltage Resonance Inverter Switching Application Fifth Generation IGBT FRD included between emitter and collector Enhancement mode type High speed IGBT : tf = 0.10 μs (typ.) (IC = 60 A) FRD : trr = 0.8 μs (typ.) (di, dt = 20 A, μs) Low saturation voltage: VCE (sat) = 2.2 V (typ.) (IC = 60 A) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Co
Toshiba Semiconductor
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