N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET - MOSFET
Pb Free Plating Product
ISSUED DATE :2006, 01, 23 REVISED DATE :
GT2530
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
N-CH BVDSS 30V N-CH RDS(ON) 72m N-CH ID 3.3A P-CH BVDSS -30V N-CH RDS(ON) 150m N-CH ID -2.3A
The GT2530 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-26 package is universally used for all commercial-industrial surface mount applications.
Features
*Low Gate Chang