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GDSSF2816EB Datasheet PDF
- MOSFET, Transistor - MOSFET
DESCRIPTION The SSF2816EB uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 0.75V. GDSSF2816EB GENERAL FEATURES ● VDS = 20V,ID = 7A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V RDS(ON) < 23mΩ @ VGS=4V RDS(ON) < 22mΩ @ VGS=4.5V ESD Rating：2500V HBM ● High Power and current handling capability ● Lead free product is acquired ● Surface Mount Package Schematic diagram Marking and pin Assignment Applicatio
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