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G4PH40UD Datasheet PDF
- IRG4PH40UD - Data
PD- 91621B IRG4PH40UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast: Optimized for high operating frequencies up to 40 kH- in hard switching, >200 kH- in resonant mode New IGBT design provides tighter parameter distribution and higher efficiency than previous generations IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations Industry standard TO-247AC package C UltraFast CoPack IGBT V
International Rectifier - IRG4PH40UD2-E - Data
PD - 96781 IRG4PH40UD2-E Features INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C UltraFast CoPack IGBT VCES = 1200V UltraFast IGBT optimized for high operating frequencies up to 200kH- in resonant mode IGBT co-packaged with HEXFREDTM ultrafast ultra-soft-recovery anti-parallel diode for use in resonant circuits Industry standard TO-247AD package with extended leads G E VCE(on) typ. = 2.43V @VGE = 15V, IC = 21A Benefits n-channel Applications Higher switching
International Rectifier
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