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G4BC40S Datasheet PDF
- IRG4BC40S - Data
PD - 91455B IRG4BC40S INSULATED GATE BIPOLAR TRANSISTOR Features Standard: optimized for minimum saturation voltage and low operating frequencies ( < 1kHz) Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 Industry standard TO-220AB package C Standard Speed IGBT VCES = 600V G E VCE(on) typ. = 1.32V @VGE = 15V, IC = 31A n-channel Benefits Generation 4 IGBTs offer highest efficiency available IGBTs optimized for specified applicati
International Rectifier
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