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FSS13A0R Datasheet PDF
- 2A/ 100V/ 0.170 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs - MOSFET
Intersil Corporation - 2A/ 100V/ 0.170 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs - MOSFET
FSS13A0D, FSS13A0R TM Data Sheet June 2000 File Number 4487.3 2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs speci cally designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which
Intersil Corporation
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