FQP9N90C, FQPF9N90C
QFET
FQP9N90C, FQPF9N90C
900V N-Channel MOSFET
General Description
These N-Channel enhancem ent m ode power f ield ef fect transistors ar e prod uced using F airchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially t ailored to minimize on-st ate resist ance, provide superior swit ching performance, and wit hstand high energy pulse in t he avalanche and commutation mode. These devices are well suited for high efficiency switched