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FQD2N60 Datasheet PDF
- 600V N-Channel MOSFET - MOSFET
FQD2N60 , FQU2N60 April 2000 QFET FQD2N60 , FQU2N60 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode
Fairchild Semiconductor - 600V N-Channel MOSFET - MOSFET
FQD2N60C , FQU2N60C N-Channel QFET® MOSFET April 2013 FQD2N60C , FQU2N60C 600 V, 1.9 A, 4.7 Ω Features 1.9 A, 600 V, RDS(on) = 4.7 Ω (Max.) @ VGS = 10 V, ID = 0.95 A Low Gate Charge (Typ. 8.5 nC) Low Crss (Typ. 4.3 pF) 100% Avalanche Tested RoHS Compliant N-Channel QFET® MOSFET Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially t
Fairchild Semiconductor
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