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FQB8N60CF Datasheet PDF
- N-Channel MOSFET - MOSFET
FQB8N60CF 600V N-Channel MOSFET December 2005 FRFET FQB8N60CF 600V N-Channel MOSFET Features 6.26A, 600V, RDS(on) = 1.5 Ω @VGS = 10 V Low gate charge ( typical 28nC) Low Crss ( typical 12pF) Fast switching 100% avalanche tested Improved dv, dt capability TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state r
Fairchild Semiconductor
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