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FQB6N90 Datasheet PDF
- 900V N-Channel MOSFET - MOSFET
FQB6N90 , FQI6N90 December 2000 QFET FQB6N90 , FQI6N90 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for high efficiency switch mode
Fairchild Semiconductor
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