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FPN660 Datasheet PDF
- PNP Low Saturation Transistor - Transistor
FPN660, FPN660A FPN660, FPN660A PNP Low Saturation Transistor These devices are designed for high current gain and low saturation voltage with collector currents up to 3.0A continuous. Sourced from process PA. C BE TO-226 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range FPN660 60 80 5 3 -55 ~
Fairchild Semiconductor - PNP Low Saturation Transistor - Transistor
FPN660, FPN660A FPN660, FPN660A PNP Low Saturation Transistor These devices are designed for high current gain and low saturation voltage with collector currents up to 3.0A continuous. Sourced from process PA. C BE TO-226 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range FPN660 60 80 5 3 -55 ~
Fairchild Semiconductor
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